ListarDepartamento de Física Aplicada, Radiología y Medicina Física por tema "Silicon carbide"
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Creep and microstructural evolution at high temperature of liquid-phase-sintered silicon carbide
(The American Ceramic Society, 2006)The compressive creep characteristics at 1625°C of liquid-phase-sintered silicon carbide ceramics containing 5 and 15 wt% of crystalline Y3Al5O12 (YAG) as the secondary phase were studied. In the two cases, strains between ... -
Dissociation of basal dislocations in 4H–SiC single crystals deformed around the transition temperature
(Wiley, 2013)The dislocation microstructure was studied in 4H–SiC samples plastically deformed by basal slip activation around the transition temperature (1000°C–1100°C). Dissociation of basal dislocations takes place over a wide ...