ListarDepartamento de Física Aplicada, Radiología y Medicina Física por tema "Transmission electron microscopy"
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Dissociation of basal dislocations in 4H–SiC single crystals deformed around the transition temperature
(Wiley, 2013)The dislocation microstructure was studied in 4H–SiC samples plastically deformed by basal slip activation around the transition temperature (1000°C–1100°C). Dissociation of basal dislocations takes place over a wide ...