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Dislocation microstructure of 4H–SiC single crystals plastically deformed around the transition temperature
Lara, A.; Castillo-Rodríguez, Miguel; Muñoz, A.; Domínguez-Rodríguez, A. (The American Ceramic Society, 2012)4H–SiC specimens were plastically deformed by basal slip at temperatures between 800 °C and 1300 °C. Samples were investigated by means of transmission electron microscopy and high-resolution techniques. The accepted ... -
Dissociation of basal dislocations in 4H–SiC single crystals deformed around the transition temperature
Castillo-Rodríguez, Miguel; Lara, A.; Muñoz, A.; Domínguez-Rodríguez, A. (Wiley, 2013)The dislocation microstructure was studied in 4H–SiC samples plastically deformed by basal slip activation around the transition temperature (1000°C–1100°C). Dissociation of basal dislocations takes place over a wide ...